EELS Measurements on Wurtzite InN

Electron-beam-induced damage in wurtzite InN

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Transport measurements on MOVPE-grown InN films

Pen-Hsiu Chang , N.C. Chen, Chin-An Chang1, Hsian-Chu Peng, Chuang-Feng Shih, KuoShung Liu, Shih-Kai Lin, Kun-Ta Wu, Shang-Chia Chen, Chao-Ping Huang, Hong-Syuan Wang, Pu-Tai Yang, C.-T. Liang, Y.H. Chang and Y.F. Chen Institute of Electro-Optical Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan 333, Taiwan Department of Materials Science and Engineering, National Tsing Hua University, H...

Atomistic Simulations of Electronic Structure in Realistically-Sized Wurtzite InN/GaN Quantum Dots having Different Geometries

Built-in/internal fields in Wurtzite quantum dots originate mainly from: (1) the fundamental crystal atomicity and the interfaces between two dissimilar materials, (2) the strain relaxation, (3) the piezoelectricity, and (4) the spontaneous polarization/pyroelectricity. In this paper, using the atomistic NEMO 3-D simulator, we study the influence of these four competing internal fields on the e...

Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations

Measuring electronic structure of wurtzite InN using electron energy loss spectroscopy

The electronic structure of wurtzite InN has been investigated by electron energy loss spectroscopy ~EELS!. Spectra of the nitrogen K edge and the indium M 4,5 edge have been measured and were compared with calculated partial, N 2p and In 5p conduction band density of states in InN. Excellent agreement on the relative positions of the characteristic peaks were obtained. From low-loss EELS the b...